专利内容由知识产权出版社提供
专利名称：JUNCTION TERMINATION EXTENSION
WITH CONTROLLABLE DOPING PROFILEAND CONTROLLABLE WIDTH FOR HIGH-VOLTAGE ELECTRONIC DEVICES
发明人：IMHOFF, Eugene, A.,KUB, Francis, J.,HOBART,
Karl, D.
申请号：US20090555申请日：20090902公开号：WO10/027990P1公开日：20100311
摘要：Methods for producing a junction termination extension surrounding the edgeof a cathode or anode junction in a semiconductor substrate, where the junctiontermination extension has a controlled arbitrary lateral doping profile and a controlledarbitrary lateral width, are provided. A photosensitive material is illuminated through aphotomask having a pattern of opaque and clear spaces therein, the photomask beingseparated from the photosensitive material so that the light diffuses before striking thephotosensitive material. After processing, the photosensitive material so exposedproduces a laterally tapered implant mask. Dopants are introduced into the
semiconductor material and follow a shape of the laterally tapered implant mask tocreate a controlled arbitrary lateral doping profile and a controlled lateral width in thejunction termination extension in the semiconductor.
申请人：IMHOFF, Eugene, A.,KUB, Francis, J.,HOBART, Karl, D.
地址：US,US,US,US
国籍：US,US,US,US
代理人：RESSING, Amy, L.
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