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Low power sense amplifier for semiconductor memory

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专利名称:Low power sense amplifier for

semiconductor memory devices

发明人:Jae-Seung Choi申请号:US08/974635申请日:19971119公开号:US05959919A公开日:19990928

摘要:A low power sense amplifier for semiconductor memory devices includes: asense-amplifying part that senses and amplifies first and second input signals from firstand second input terminals, and produces first and second output signals having differentvoltage levels from each other via the first and second output terminals; a charging partfor charging the first and second output terminals of the sense- amplifying part prior tothe sensing and amplifying operation of the sense- amplifying part; a control part forproducing a control signal for disabling the sense amplifying part if the sense-amplifyingpart produces output signals having different voltage levels from each other.

申请人:HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.

代理机构:Ware, Fressola, Van Der Sluys & Adolphson LLP

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