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专利名称：Method of producing an isolation separating
the active regions of a highly integratedCMOS circuit
发明人：Beinvogl, Willy, Dr.申请号：EP85115481.5申请日：19851205公开号：EP0197198A1公开日：19861015
专利附图：
摘要：the invention concerns a method of 57 for the manufacture of the active areasof a highly integrated cmos circuit; isolation, in which the areas of the layer in whichminimal isolafionsstege (8) are required, the active areas in the form of trenches in theinsulation (10) layers (4) freige\ätzt,while in the other areas for the production ofthe active areas which feldoxidbereiche (7) the known locos technique is applied.preferably, the graben\ätzung is in n - wannenbereich (1), with the masking of thefeldimplantation (6) in the p - tub (2) on the n tub (1), an oxide (4) as feldoxid is used.theerfindungsgem\ä\ße procedure allows the production of isolationsstegen (8) asmall 1.5 microns and can be used in the production of dynamic rams in the hub area.
申请人：SIEMENS AKTIENGESELLSCHAFT
地址：Wittelsbacherplatz 2 80333 München DE
国籍：DE
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