专利内容由知识产权出版社提供
专利名称：Method for fabricating inductor device发明人：Jenhao Cheng,Xining Wang,Ling Liu申请号：US14512988申请日：20141013公开号：US09018731B2公开日：20150428
专利附图：
摘要：Various embodiments provide inductor devices and fabrication methods. Anexemplary inductor device can include a plurality of planar spiral wirings isolated by adielectric layer. The planar spiral wirings can be connected by conductive pads formedover the dielectric layer and by conductive plugs formed in the dielectric layer. In one
embodiment, a third planar spiral wiring can be formed over a second planar spiralwirings that is formed over a first planar spiral wiring. The third planar spiral wiring can beconfigured in parallel with the first third planar spiral wiring. The second planar spiralwiring can be configured in series with the first and third planar spiral wirings configuredin parallel.
申请人：Semiconductor Manufacturing International Corp.
地址：Shanghai CN
国籍：CN
代理机构：Anova Law Group, PLLC
更多信息请下载全文后查看
