专利内容由知识产权出版社提供
专利名称：Multi-zone RF inductively coupled source
configuration
发明人：Hiroji Hanawa,Tetsuya Ishikawa,Manus
Wong,Shijian Li,Kaveh Niazi,Kenneth
Smyth,Fred C. Redeker,Troy Detrick,Jay DeePinson, II
申请号：US08/865432申请日：19970529公开号：US06083344A公开日：20000704
摘要：The present invention provides an HDP-CVD tool using simultaneous depositionand sputtering of doped and undoped silicon dioxide capable of excellent gap fill andblanket film deposition on wafers. The tool of the present invention includes: a dual RFzone inductively coupled plasma source; a dual zone gas distribution system;
temperature controlled surfaces within the tool; a symmetrically shaped turbomolecularpumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminumalloy chamber; and a remote plasma chamber cleaning system.
申请人：APPLIED MATERIALS, INC.
代理机构：Thomason, Moser & Patterson
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