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专利名称：Method for creating barriers for copper
diffusion
发明人：Vladimir Zubkov,Sheldon Aronowitz申请号：US11104763申请日：20050412
公开号：US20050179138A1公开日：20050818
专利附图：
摘要：A barrier layer for a semiconductor device is provided. The semiconductordevice comprises a dielectric layer, an electrically conductive copper containing layer, anda barrier layer separating the dielectric layer from the copper containing layer. The
barrier layer comprises a silicon oxide layer and a dopant, where the dopant is a divalention, which dopes the silicon oxide layer adjacent to the copper containing layer. A methodof forming a barrier layer is provided. A silicon oxide layer with a surface is provided. Thesurface of the silicon oxide layer is doped with a divalent ion to form a barrier layerextending to the surface of the silicon oxide layer. An electrically conductive coppercontaining layer is formed on the surface of the barrier layer, where the barrier layerprevents diffusion of copper into the substrate.
申请人：Vladimir Zubkov,Sheldon Aronowitz
地址：Mountain View CA US,San Jose CA US
国籍：US,US
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