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STP9NK90Z-STF9NK90Z
STW9NK90Z
N-CHANNEL900V-1.1Ω-8ATO-220/TO-220FP/TO-247
Zener-ProtectedSuperMESH™PowerMOSFET
TYPESTP9NK90ZSTF9NK90ZSTW9NK90Z
ssssss
VDSS900V900V900V
RDS(on)<1.3Ω<1.3Ω<1.3Ω
ID8A8A8A
Pw160W40W160W
123TYPICALRDS(on)=1.1Ω
EXTREMELYHIGHdv/dtCAPABILITY100%AVALANCHETESTEDGATECHARGEMINIMIZED
VERYLOWINTRINSICCAPACITANCESVERYGOODMANUFACTURINGREPEATIBILITY
TO-220TO-220FP321TO-247DESCRIPTION
TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistak-entoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseriescomple-mentsSTfullrangeofhighvoltageMOSFETsin-cludingrevolutionaryMDmesh™products.
INTERNALSCHEMATICDIAGRAMAPPLICATIONS
sHIGHCURRENT,HIGHSPEEDSWITCHINGsSWITCHMODEPOWERSUPPLIES
sDC-ACCONVERTERSFORWELDING,UPSANDMOTORDRIVE
ORDERINGINFORMATION
SALESTYPESTP9NK90ZSTF9NK90ZSTW9NK90Z
MARKINGP9NK90ZF9NK90ZW9NK90Z
PACKAGETO-220TO-220FPTO-247
PACKAGING
TUBETUBETUBE
April20031/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
ABSOLUTEMAXIMUMRATINGS
SymbolVDSVDGRVGSIDIDIDM()PTOTVESD(G-S)dv/dt(1)VISOTjTstg
Parameter
STP9NK90Z
Value
STF9NK90Z
STW9NK90Z
UnitVVV
85321601.28
AAAWW/°CKVV/ns
-V°C°C
Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage
DrainCurrent(continuous)atTC=25°CDrainCurrent(continuous)atTC=100°CDrainCurrent(pulsed)TotalDissipationatTC=25°CDeratingFactor
GatesourceESD(HBM-C=100pF,R=1.5KΩ)PeakDiodeRecoveryvoltageslopeInsulationWithstandVoltage(DC)OperatingJunctionTemperatureStorageTemperature
-85321601.28
900900±308(*)5(*)32(*)400.3244.52500-55to150-55to150
()Pulsewidthlimitedbysafeoperatingarea
(1)ISD≤8A,di/dt≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAX.(*)Limitedonlybymaximumtemperatureallowed
THERMALDATA
TO-220
Rthj-caseRthj-amb
Tl
ThermalResistanceJunction-caseMaxThermalResistanceJunction-ambientMax
MaximumLeadTemperatureForSolderingPurpose
0.78
62.5
300TO-220FP
3.1
TO-2470.7850
°C/W°C/W°C
AVALANCHECHARACTERISTICS
SymbolIAREAS
Parameter
AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax)
SinglePulseAvalancheEnergy
(startingTj=25°C,ID=IAR,VDD=50V)
MaxValue
8300
UnitAmJ
GATE-SOURCEZENERDIODE
SymbolBVGSO
Parameter
Gate-SourceBreakdownVoltage
TestConditions
Igs=±1mA(OpenDrain)
Min.30
Typ.
Max.
UnitV
PROTECTIONFEATURESOFGATE-TO-SOURCEZENERDIODES
Thebuilt-inback-to-backZenerdiodeshavespecificallybeendesignedtoenhancenotonlythedevice’sESDcapability,butalsotomakethemsafelyabsorbpossiblevoltagetransientsthatmayoccasionallybeappliedfromgatetosource.InthisrespecttheZenervoltageisappropriatetoachieveanefficientandcost-effectiveinterventiontoprotectthedevice’sintegrity.TheseintegratedZenerdiodesthusavoidtheusageofexternalcomponents.
2/11
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ELECTRICALCHARACTERISTICS(TCASE=25°CUNLESSOTHERWISESPECIFIED)ON/OFF
SymbolV(BR)DSSIDSSIGSSVGS(th)RDS(on)
Parameter
Drain-source
BreakdownVoltageZeroGateVoltage
DrainCurrent(VGS=0)Gate-bodyLeakageCurrent(VDS=0)GateThresholdVoltageStaticDrain-sourceOnResistance
TestConditions
ID=1mA,VGS=0
VDS=MaxRating
VDS=MaxRating,TC=125°CVGS=±20V
VDS=VGS,ID=100µAVGS=10V,ID=3.6A
3
3.751.1
Min.900
150±104.51.3
Typ.
Max.
UnitVµAµAµAVΩ
DYNAMIC
Symbolgfs(1)CissCossCrssCosseq.(3)
Parameter
ForwardTransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitanceEquivalentOutputCapacitance
Parameter
Turn-onDelayTimeRiseTime
TotalGateChargeGate-SourceChargeGate-DrainCharge
TestConditions
VDS=15V,ID=3.6A
VDS=25V,f=1MHz,VGS=0
Min.
Typ.5.75211519040115
Max.
UnitSpFpFpFpF
VGS=0V,VDS=0Vto720V
SWITCHINGON
Symboltd(on)trQgQgsQgd
TestConditions
VDD=450V,ID=4ARG=4.7ΩVGS=10V
(ResistiveLoadsee,Figure3)VDD=720V,ID=8A,VGS=10V
Min.
Typ.2213721438
100Max.
UnitnsnsnCnCnC
SWITCHINGOFF
Symboltd(off)tftr(Voff)tftc
Parameter
Turn-offDelayTimeFallTime
Off-voltageRiseTimeFallTime
Cross-overTime
TestConditions
VDD=450V,ID=4ARG=4.7ΩVGS=10V
(ResistiveLoadsee,Figure3)VDD=720V,ID=8A,RG=4.7Ω,VGS=10V
(InductiveLoadsee,Figure5)
Min.
Typ.5528531122
Max.
Unitnsnsnsnsns
SOURCEDRAINDIODE
SymbolISDISDM(2)VSD(1)trrQrrIRRM
Parameter
Source-drainCurrent
Source-drainCurrent(pulsed)ForwardOnVoltageReverseRecoveryTimeReverseRecoveryChargeReverseRecoveryCurrent
ISD=8A,VGS=0ISD=8A,di/dt=100A/µsVDD=50V,Tj=150°C(seetestcircuit,Figure5)
9501021
TestConditions
Min.
Typ.
Max.8321.6
UnitAAVnsµCA
Note:1.Pulsed:Pulseduration=300µs,dutycycle1.5%.
2.Pulsewidthlimitedbysafeoperatingarea.
3.Cosseq.isdefinedasaconstantequivalentcapacitancegivingthesamechargingtimeasCosswhenVDSincreasesfrom0to80%VDSS.
3/11
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SafeOperatingForTO-220ThermalImpedanceForTO-220SafeOperatingAreaForTO-220FPThermalImpedanceForTO-220FPSafeOperatingAreaForTO-247
ThermalImpedanceForTO-2474/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
OutputCharacteristicsTransferCharacteristics
TransconductanceStaticDrain-sourceOnResistance
GateChargevsGate-sourceVoltageCapacitanceVariations5/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
NormalizedGateThresholdVoltagevsTemp.NormalizedOnResistancevsTemperatureSource-drainDiodeForwardCharacteristicsNormalizedBVDSSvsTemperature
MaximumAvalancheEnergyvsTemperature6/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
Fig.1:UnclampedInductiveLoadTestCircuit
Fig.2:UnclampedInductiveWaveform
Fig.3:SwitchingTimesTestCircuitForResistiveLoad
Fig.4:GateChargetestCircuit
Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimes
7/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.2440.1370.147 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 1.27 0.050 16.4 0.5ACD1L2DF1G1EDia.L5L7L6L4P011CL98/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
TO-220FPMECHANICALDATAmm.MIN.4.42.52.50.450.751.151.154.952.4101628.69.82.915.99330.610.63.616.49.33.21.126.03850.1140.6260.3540.118TYPMAX.4.62.72.750.711.51.55.22.710.4MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.3930.6301.2040.4170.1410.50.3660.126inchTYP.MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409DIM.ABDEFF1F2GG1HL2L3L4L5L6L7ØABL3L6L7F1FDG1EHF2L2L5123L4G9/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
TO-247 MECHANICAL DATAmm.MIN.4.852.201.02.03.00.4019.8515.455.4514.203.7018.503.554.505.503.655.500.1400.1770.21614.804.300.5600.140.7280.1430.216TYPMAX.5.152.601.402.403.400.8020.1515.75MIN.0.190.0860.0390.0790.1180.0150.7810.6080.2140.5820.17inchTYP.MAX.0.200.1020.0550.0940.1340.030.7930.620DIM.AA1bb1b2cDEeLL1L2øPøRS10/11
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STP9NK90Z-STF9NK90Z-STW9NK90Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.© http://www.st.com11/11
