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专利名称：Charge transfer device having improved
electrodes
发明人：Hajime Matsuda,Hiroshi Morito申请号：US06/500595申请日：19830602公开号：US045005A公开日：19860513
摘要：A charge transfer device in which a number of transfer electrodes, comprised ofalternating main electrodes and auxiliary electrodes, are formed on but insulated from achannel region in a semiconductor substrate for transferring charges. The transferelectrodes are formed such that the sides of each of the electrodes which are transverseto the channel direction are concave in the direction of charge transfer. These concavesides produce an additional accelerating electric field which supplements theconventional fringing fields.
申请人：NEC CORPORATION
代理机构：Sughrue, Mion, Zinn, Macpeak & Seas
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