IRFZ244Z

AUTOMOTIVE GRADE

Features

●●●●●

AUIRFZ44ZAUIRFZ44ZS

HEXFET® Power MOSFET

●●

Advanced Process TechnologyUltra Low On-Resistance

175°C Operating TemperatureFast Switching

Repetitive Avalanche Allowed up toTjmax

Lead-Free, RoHS CompliantAutomotive Qualified *

DV(BR)DSSRDS(on) max.IDD

D

55V13.9mΩ51AGSDescription

Specifically designed for Automotive applications, thisHEXFET® Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance per siliconarea. Additional features of this design are a 175°C junctionoperating temperature, fast switching speed and improvedrepetitive avalanche rating . These features combine to makethis design an extremely efficient and reliable device for usein Automotive applications and a wide variety of other appli-cations.

G

D

S

G

D

S

TO-220ABAUIRFZ44Z

D2PakAUIRFZ44ZS

GGateDDrainSSourceAbsolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratingsonly; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and powerdissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwisespecified.

ParameterID @ TC = 25°CID @ TC = 100°CIDMPD @TC = 25°CVGSEASEAS (tested)IAREARTJ TSTGContinuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (See Fig. 9)Pulsed Drain Current cMaximum Power DissipationLinear Derating Factor Gate-to-Source VoltageSingle Pulse Avalanche Energy (Thermally Limited) dSingle Pulse Avalanche Energy Tested Value iAvalanche Current cRepetitive Avalanche Energy hOperating Junction andStorage Temperature RangeSoldering Temperature, for 10 seconds (1.6mm from case )Mounting torque, 6-32 or M3 screwMax.5136200800.53 ± 2086105See Fig.12a,12b,15,16-55 to + 17530010 lbf•in (1.1N•m)UnitsAWW/°CVmJAmJ°CThermal ResistanceParameterRθJC RθCS RθJA RθJA Junction-to-Case kCase-to-Sink, Flat, Greased Surface Junction-to-AmbientJunction-to-Ambient (PCB Mount, steady state)jTyp.–––0.50––––––Max.1.87–––6240Units°C/WHEXFET® is a registered trademark of International Rectifier.*Qualification standards can be found at http://www.irf.com/

www.irf.com1

07/23/2010

AUIRFZ44Z/ZS

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)ParameterV(BR)DSS∆ΒVDSS/∆TJ RDS(on)VGS(th)gfsIDSSIGSSDrain-to-Source Breakdown VoltageBreakdown Voltage Temp. CoefficientStatic Drain-to-Source On-ResistanceGate Threshold VoltageForward TransconductanceDrain-to-Source Leakage CurrentGate-to-Source Forward LeakageGate-to-Source Reverse LeakageMin.55––––––2.022––––––––––––Typ.–––0.05411.1––––––––––––––––––Typ.297.212146833414.57.51420240130830190300Max.––––––13.94.0–––20250200-200Max.431118––––––––––––––––––––––––––––––––––––UnitsVV/°CmΩVSµAnAConditionsVGS = 0V, ID = 250µAReference to 25°C, ID = 1mA VGS = 10V, ID = 31A fVDS = VGS, ID = 250µAVDS = 25V, ID = 31AVDS = 55V, VGS = 0VVDS = 55V, VGS = 0V, TJ = 125°CVGS = 20VVGS = -20VConditionsID = 31AVDS = 44VVGS = 10V fVDD = 28VID = 31ARG = 15ΩVGS = 10V fBetween lead,6mm (0.25in.)from packageGDynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)QgQgsQgdtd(on)trtd(off)tfLDLSCissCossCrssCossCossCoss eff.ParameterMin.Total Gate Charge –––Gate-to-Source Charge–––Gate-to-Drain (\"Miller\") Charge–––Turn-On Delay Time–––Rise Time–––Turn-Off Delay Time–––Fall Time–––Internal Drain Inductance–––Internal Source InductanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceOutput CapacitanceOutput CapacitanceEffective Output Capacitance–––––––––––––––––––––UnitsnCnsnHDpFand center of die contactSVGS = 0VVDS = 25Vƒ = 1.0MHz, See Fig. 5VGS = 0V, VDS = 1.0V, ƒ = 1.0MHzVGS = 0V, VDS = 44V, ƒ = 1.0MHzVGS = 0V, VDS = 0V to 44V Diode Characteristics ParameterISISMVSDtrrQrrtonContinuous Source Current (Body Diode)Pulsed Source Current(Body Diode)Ã󰀁Diode Forward VoltageReverse Recovery TimeReverse Recovery ChargeForward Turn-On TimeMin.–––––––––––––––Typ.–––––––––2317Max.512001.23526UnitsAConditionsMOSFET symbolshowing theintegral reverseGSDVnsnCp-n junction diode.TJ = 25°C, IS = 31A, VGS = 0V fTJ = 25°C, IF = 31A, VDD = 28Vdi/dt = 100A/µs fIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:

󰀁Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).

󰀂 Limited by TJmax, starting TJ = 25°C, L =0.18mH, RG = 25Ω, IAS = 31A, VGS =10V. Part not recommended for use above this value.󰀃ISD ≤ 31A, di/dt ≤ 840A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

󰀄Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

󰀅Coss eff. is a fixed capacitance that gives the same charging time󰀆󰀇󰀈󰀉

as Coss while VDS is rising from 0 to 80% VDSS .

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitiveavalanche performance.

This value determined from sample failure population, startingTJ = 25°C, L =0.18mH, RG = 25Ω, IAS = 31A, VGS =10V.This is applied to D2Pak, when mounted on 1\" square PCB( FR-4 or G-10 Material ). For recommended footprint andsoldering techniques refer to application note #AN-994.Rθ is rated at TJ of approximately 90°C.

2www.irf.com

AUIRFZ44Z/ZS

Qualification Information†Automotive(per AEC-Q101) Qualification Level††Comments:Thispartnumber(s)passedAutomotivequalification.IR’sIndustrialandConsumerqualificationlevelisgrantedbyextensionofthehigherAutomotivelevel.TO-220AB N/AMoisture Sensitivity Level Machine ModelHuman Body ModelCharged Device ModelRoHS CompliantTO-262D2PakN/AMSL1Class M2 (200V)AEC-Q101-002Class H1A (500V)AEC-Q101-001Class C5 (1125V)AEC-Q101-005YesESD󰀁 Qualification standards can be found at International Rectifier󰀔s web site: http//www.irf.com/󰀁󰀁 Exceptions to AEC-Q101 requirements are noted in the qualification report.

www.irf.com3

AUIRFZ44Z/ZS

1000VGSTOP 15V10V)8.0V(A7.0V tn6.0Ve5.5Vrr100u5.0VCBOTTOM4.5V ecruo-Sot-ni10arD ,ID4.5V≤60µs PULSE WIDTH1Tj = 25°C0.1

1

10

100

VDS, Drain-to-Source Voltage (V)Fig 1. Typical Output Characteristics

1000

)Α( tnerru100

C ercuoTJ = 175°C-SotT= 25°C-ni10

J arD ,DIVDS = 15V1.0

≤60µs PULSE WIDTH2

4

6

8

10

12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

41000VGSTOP 15V10V)8.0V(A7.0V tn6.0Ve5.5Vrr100u5.0VCBOTTOM4.5V ecruo-Sot-ni104.5VarD ,ID≤60µs PULSE WIDTH1Tj = 175°C0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

60

)(S 50eTJ = 25°Ccnatcu40dnocsn30arTTJ = 175°C draw20roF ,sfG10

VDS = 10V00

10

20

30

40

50

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com

10000

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + Cgd)Fp(ecCnissatic1000

apaCC ,ossCCrss100

1

10

100

VDS, Drain-to-Source Voltage (V)Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000)(A100

tnerrTuJ = 175°CC n10

iarD esre1

TJ = 25°CveR ,D0.10

ISV0.01

GS = 0V0.00.51.01.52.0VSD, Source-to-Drain Voltage (V)Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.comAUIRFZ44Z/ZS

12.0

ID= 31A)10.0VDS= 44V(V eVDS= 28VgaVtDS= 11Vlo8.0 Vercuo6.0-Sot-eta4.0G ,SGV2.00.0

051015202530

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)100

10

100µsec1

1msecDTc = 25°CTj = 175°C10msecSingle Pulse0.1

1

10

1001000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

5

I, Drain-to-Source Current (A)AUIRFZ44Z/ZS

RDS(on) , Drain-to-Source On Resistance (Normalized)555045ID, Drain Current (A)2.5

ID = 31AVGS = 10V2.0

403530252015105025

50

75

100

125

150

175

TC , Case Temperature (°C)

1.5

1.0

0.5

-60-40-200

20406080100120140160180

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 10. Normalized On-Resistance

vs. Temperature

10Thermal Response ( Z thJC )1D = 0.500.200.10.100.050.020.01τJR1R1τJτ1τ2R2R2R3R3τ3Ri (°C/W) τi (sec)τC0.8487 0.00044τ0.6254 0.002210.3974 0.01173τ1τ2τ30.01SINGLE PULSE( THERMAL RESPONSE )Ci= τi/RiCi i/RiNotes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc0.0010.010.110.0011E-0061E-0050.0001t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6www.irf.com

AUIRFZ44Z/ZS

15V400VDSLDRIVERRGD.U.T+IAS-VDDA20VVGStp0.01ΩFig 12a. Unclamped Inductive Test Circuit

V(BR)DSStpIASFig 12b. Unclamped Inductive Waveforms

QG10 V

QGSQGDVGChargeFig 13a. Basic Gate Charge Waveform

LVCC0DUT1KFig 13b. Gate Charge Test Circuit

www.irf.com)JID(m y350gTOP 3.8Are5.5An300 EBOTTOM31Aehcn250ala200 Avelsu150 Pelgn100i S, 50EAS025

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

4.0

ID = 250µA3.0

2.0

)ht(SG1.0

-75-50-25

0

25

50

75100125150175200

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

7

VGate threshold Voltage (V)AUIRFZ44Z/ZS

100Duty Cycle = Single PulseAvalanche Current (A)100.010.050.10Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses10.11.0E-051.0E-041.0E-031.0E-021.0E-01tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

100

EAR , Avalanche Energy (mJ)80

TOP Single Pulse BOTTOM 1% Duty CycleID = 31A60

40

20

025

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16:(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]EAS (AR) = PD (ave)·tav

Fig 16. Maximum Avalanche Energy

vs. Temperature

8www.irf.com

AUIRFZ44Z/ZS

D.U.TDriver Gate Drive.W.+P.W.PeriodD = PPeriod󰀃Circuit Layout ConsiderationsVGS=10V* • Low Stray Inductance- • Ground Plane • Low Leakage Inductance+ Current TransformerD.U.T. ISDWaveform󰀂ReverseRecovery--󰀄+CurrentBody Diode ForwardCurrentdi/dtD.U.T. VDSWaveform󰀁Diode Recoverydv/dtVDDRG• VDD• dv/dt controlled by RG+Re-AppliedVoltageBody Diode Forward Drop• Driver same type as D.U.T.• ID.U.T. - Device Under TestSD controlled by Duty Factor \"D\"-Inductor CurentRipple ≤5%ISD* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

VRDDSVGSRD.U.T.G+-VDD

10VPulse Width ≤ 1 µsDuty Factor ≤ 0.1 %Fig 18a. Switching Time Test Circuit

VDS90%10%VGStd(on)trtd(off)tfFig 18b. Switching Time Waveforms

www.irf.com9

AUIRFZ44Z/ZS

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Part Number

AUIRFZ44ZIR Logo

YWWAXX or XXDate CodeY= YearWW= Work WeekA= Automotive, LeadFreeLot CodeTO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/10www.irf.com

AUIRFZ44Z/ZSD2Pak (TO-263AB) Package OutlineDimensions are shown in millimeters (inches)D2Pak (TO-263AB) Part Marking InformationPart NumberAUIRFZ44ZSIR LogoYWWAXX or XXDate CodeY= YearWW= Work WeekA= Automotive, LeadFreeLot CodeNote: For the most current drawing please refer to IR website at http://www.irf.com/package/www.irf.com11

AUIRFZ44Z/ZS

D2Pak Tape & Reel Information

TRR1.60 (.063)1.50 (.059)4.10 (.161)3.90 (.153)1.60 (.063)1.50 (.059)0.368 (.0145)0.342 (.0135)FEED DIRECTION1.85 (.073)1.65 (.065)11.60 (.457)11.40 (.449)15.42 (.609)15.22 (.601)24.30 (.957)23.90 (.941)TRL10.90 (.429)10.70 (.421)1.75 (.069)1.25 (.049)16.10 (.634)15.90 (.626)4.72 (.136)4.52 (.178)FEED DIRECTION13.50 (.532)12.80 (.504)27.40 (1.079)23.90 (.941)4330.00(14.173) MAX.60.00 (2.362) MIN.NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.26.40 (1.039)24.40 (.961)330.40 (1.197) MAX.4Note: For the most current drawing please refer to IR website at http://www.irf.com/package/12www.irf.com

AUIRFZ44Z/ZS

Ordering InformationBase part Package TypeAUIRFZ44ZAUIRFZ44ZSTO-220D2PakStandard PackFormTubeTubeTape and Reel LeftTape and Reel RightComplete Part NumberQuantity5050800800AUIRFZ44ZAUIRFZ44ZSAUIRFZ44ZSTRLAUIRFZ44ZSTRRwww.irf.com13

AUIRFZ44Z/ZS

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and servicesat any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix followautomotive industry and / or customer specific requirements with regards to product discontinuance and process changenotification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’sstandard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support thiswarranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarilyperformed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their productsand applications using IR components. To minimize the risks with customer products and applications, customers shouldprovide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and isaccompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterationsis an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of thirdparties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product orservice voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptivebusiness practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into thebody, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR productcould create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any suchunintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorneyfees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorizeduse, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR productsare specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grademeet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designatedas military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatoryrequirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IRproducts are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not beresponsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

14www.irf.com