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PD - 94156
IRFZ24V
HEXFET® Power MOSFET
Advanced Process TechnologylUltra Low On-ResistancelDynamic dv/dt Rating
l175°C Operating TemperaturelFast Switching
lFully Avalanche Rated
lOptimized for SMPS ApplicationsDescription
l
DVDSS = 60VRDS(on) = 60mΩGSID = 17AAdvanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.
TO-220ABAbsolute Maximum Ratings
Parameter
ID @ TC = 25°CID @ TC = 100°CIDM
PD @TC = 25°CVGSIAREARdv/dtTJTSTGContinuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current Power DissipationLinear Derating FactorGate-to-Source VoltageAvalanche CurrentRepetitive Avalanche EnergyPeak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 secondsMounting torque, 6-32 or M3 srew
Max.
171268440.29 ± 20174.44.2
-55 to + 175300 (1.6mm from case )10 lbf•in (1.1N•m)
Units
AWW/°CVAmJV/ns°C
Thermal Resistance
Parameter
RθJCRθCSRθJA
Junction-to-Case
Case-to-Sink, Flat, Greased SurfaceJunction-to-Ambient
Typ.
–––0.50–––
Max.
3.4–––62
Units
°C/W
www.irf.com1
3/16/01
元器件交易网www.cecb2b.com
IRFZ24V
元器件交易网www.cecb2b.com
IRFZ24V
元器件交易网www.cecb2b.com
IRFZ24V
元器件交易网www.cecb2b.com
IRFZ24V
元器件交易网www.cecb2b.com
IRFZ24V
元器件交易网www.cecb2b.com
IRFZ24V
元器件交易网www.cecb2b.com
IRFZ24V
