30N06-TF3-R资料

UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps,󰀁60 Volts N-CHANNEL POWER MOSFET 󰂄 DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. 1TO-220 MOSFET 1TO-220F󰂄 FEATURES * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 30N06L󰂄 SYMBOL 2.Drain1.Gate3.Source 󰂄 ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 30N06-TA3-T 30N06L-TA3-T TO-220 G D S Tube 30N06-TF3-T 30N06L-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 30N06L-TA3-T(1)Packing Type(2)Package Type(3)Lead Plating(1) T: Tube, R: Tape Reel(2) TA3: TO-220, TF3: TO-220F(3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 󰂄 ABSOLUTE MAXIMUM RATINGS MOSFET PARAMETER SYMBOLRATINGS UNIT Drain-Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V TC = 25󰄊 30 A Continuous Drain Current ID TC = 100󰄊 21.3 A Pulsed Drain Current (Note 1) IDM 120 A Avalanche Energy, Single Pulsed (Note 2) EAS 300 mJ Repetitive Avalanche Energy (Note 1) EAR 8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7.5 V/ns Total Power Dissipation (TC = 25󰄊) 80 W PD 0.53 W/󰄊 Derating Factor Above 25󰄊 Operation Junction Temperature TJ -55 ~ +150 󰄊 Storage Temperature TSTG -55 ~ +150 󰄊 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 THERMAL DATA PARAMETER SYMBOLMINTYP MAX UNIT Thermal Resistance, Junction-to-Case θJC 1.8 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/W 󰂄 ELECTRICAL CHARACTERISTICS (TC = 25󰄊, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNITOff Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 60 V VDS = 60 V, VGS = 0 V 1 µADrain-Source Leakage Current IDSS µAVDS = 48 V, VGS = 0 V,󰀁TJ = 150󰄊 10Gate-Source Leakage Forward VGS = 20V, VDS = 0 V 100nAIGSS Current Reverse VGS = -20V, VDS = 0 V -100nABreakdown Voltage Temperature 󰂶BVDSS/△TJID = 250 µA, Referenced to 25󰄊 0.06 V/󰄊Coefficient On Characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0V Static Drain-Source On-State RDS(ON) VGS = 10 V, ID = 15 A 32 40mΩResistance Dynamic Characteristics Input Capacitance CISS 800 pFVGS = 0 V, VDS = 25 V󰀍󰀁f = 1MHz Output Capacitance COSS 300 pF 80 pFReverse Transfer Capacitance CRSS Switching Characteristics Turn-On Delay Time tD(ON) 12 ns VDD = 30V, ID =15 A,󰀁VGS=10V Turn-On Rise Time tR 79 ns (Note 4, 5) Turn-Off Delay Time tD(OFF) 50 ns Turn-Off Fall Time tF 52 ns Total Gate Charge QG 20 30nCVDS = 60V, VGS = 10 V, ID = 24A Gate-Source Charge QGS 6 nC(Note 4, 5) Gate-Drain Charge (Miller Charge) QGD 9 nC www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 󰂄 ELECTRICAL CHARACTERISTICS󰀁(Cont.) MOSFET PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNITSource-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 30A, VGS = 0 V 1.4V Maximum Continuous Drain-Source Diode Forward Current Integral Reverse p-n Junction Diode in DIS 30A the MOSFET Maximum Pulsed Drain-Source Diode Forward Current ISM GS 120A Reverse Recovery Time tRR 40 ns IS = 30A, VGS = 0 V dIF / dt = 100 A/µs (Note4) Reverse Recovery Charge QRR 70 µCNote 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=30A, RG=20Ω, Starting TJ=25󰄊 3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25󰄊 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 3 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 󰂄 TEST CIRCUITS AND WAVEFORMS MOSFET D.U.T.+VDS-+-LRGDriverSame Type as D.U.T.*dv/dt controlled by RG* ISD controlled by pulse period* D.U.T.-Device Under TestVDDVGSFig. 1A Peak Diode Recovery dv/dt Test Circuit VGS(Driver)PeriodP.W.D=P. W.PeriodVGS=10VIFM, Body Diode Forward CurrentISD(D.U.T.)IRMBody Diode Reverse Currentdi/dtBody Diode Recovery dv/dtVDS(D.U.T.)VDDBody Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 4 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 󰂄 TEST CIRCUITS AND WAVEFORMS (Cont.) VDSVGSRGVGS10%tD(ON)tRtD(OFF) MOSFET RLVDDVDS90%10VPulse Width≤ 1󰇄sDuty Factor≤0.1%D.U.T.tF Fig. 2A Switching Test Circuit 󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁 Fig. 2B Switching Waveforms 50kΩ12V0.2󰇄F0.3󰇄FSame Type as D.U.T.10VVDSQGSQGQGDVGSDUT1mAVGCharge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform LVDSBVDSSRGVDDD.U.T.10VtpIAStpTime Fig. 4A Unclamped Inductive Switching Test Circuit 󰀁󰀁󰀁Fig. 4B Unclamped Inductive Switching Waveforms www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 5 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 󰂄 TYPICAL CHARACTERISTICS On-State Characteristics VGSTop: 15V 10V 8V2 7V10 6V 5.5V5VBottorm: 4.5V MOSFET Transfer CharacteristicsDrain Current, ID(A)Drain Current, ID(A)25℃1014.5V101150102℃Note:1. VDS=25V 2.20µs Pulse Test10024567103Gate-Source Voltage, VGS(V)10010-11010Drain-Source Voltage, VDS(V) 01 Drain-Source On-Resistance, RDS(ON) (mΩ)On-Resistance Variation vs. Drain Current and

Gate Voltage1008060

VGS=10V40

VGS=20V200.00

ReverseDrain Current, ISD(A)Reverse Drain Current vs. Allowable Case

Temperature102150℃10125℃*Note:1. VGS=0V 2.250µs Test1.6

20406080100120

Drain Current, ID(A)

1000.20.40.60.81.01.21.4

Source-Drain Voltage, VSD(V)

2000Gate-to-Source Voltage, VGS(V)Capacitance (pF)1500Capacitance Characteristics(Non-Repetitive)Ciss=Cgs+Cgd (Cds=shorted)Coss=Cds+CgdCrss=CgdCossCiss*Note:1. VGS=0V 2.f = 1MHzGate Charge Characteristics12108200*Note: ID=30A1015205Total Gate Charge, QG(nC)25VDS=30VVDS=48V1000500Crss00.1110Drain-Source Voltage, VDC(V) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 6 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 󰂄 TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Junction Temperature1.2On-Resistance Variation vs. Junction Temperature MOSFET Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) 3.02.52.01.51.00.50.01.11.0*Note: 1. VGS=0V2. ID=250µA-500501001502000.9*Note: 1. VGS=10V2. ID=15A-50050100150Junction Temperature, TJ(℃)0.8-100Junction Temperature, TJ(℃) Maximum Safe Operating 100Drain Current , ID,(A)Maximum Drain Current vs. Case Temperature30Drain Current, ID(A)Operation in This Area by RDS (ON)100µs10msDC1ms102010.11*Note:1. Tc=25℃2. TJ=150℃3.Single Pulse 101001000Drain-Source Voltage, VDS(V) 100255075100125150 Case Temperature, TC(℃)Transient Thermal Response CurveThermal Response, ZθJC(t)1D=0.50.20.10.10.050.020.01Single pulse*Note:1. ZθJC (t) = 0.88℃/W Max.2. Duty Factor, D=t1/t23.TJ -TC=PDM×ZθJC(t) 0.011011E-51E-41E-30.010.1Square Wave Pulse Duration, t1 (sec) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 7 of 8 QW-R502-087,A 元器件交易网www.cecb2b.com

30N06 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 8 of 8 QW-R502-087,A